 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Composite Transistors XN06435 (XN6435) Silicon PNP epitaxial planar type Unit: mm For high-frequency amplification Features * Two elements incorporated into one package * Reduction of the mounting area and assembly cost by one half 4 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 5 6 0.16+0.10 -0.06 1.50+0.25 -0.05 2.8+0.2 -0.3 3 2 1 0.30+0.10 -0.05 Basic Part Number * 2SA1022 x 2 0.50+0.10 -0.05 10 1.1+0.2 -0.1 (0.65) Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -30 -20 -5 -30 300 150 -55 to +150 Unit V V V mA mW C C 1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2) EIAJ: SC-74 0 to 0.1 Marking Symbol: 7W Internal Connection 4 5 6 1.1+0.3 -0.1 4: Base (Tr2) 5: Emitter (Tr2) 6: Emitter (Tr1) Mini6-G1 Package Tr2 3 2 Tr1 1 Electrical Characteristics Ta = 25C 3C Parameter Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE ratio * Symbol VBE ICBO ICEO IEBO hFE hFE(Small /Large) Conditions VCE = -10 V, IC = -1 mA VCB = -10 V, IE = 0 VCE = -20 V, IB = 0 VEB = -5 V, IC = 0 VCB = -10 V, IE = 1 mA VCB = -10 V, IE = 1 mA IC = -10 mA, IB = -1 mA VCB = -10 V, IE = 1 mA, f = 200 MHz VCB = -10 V, IE = 1 mA, f = 5 MHz VCB = -10 V, IE = 1 mA, f = 2 MHz VCE = -10 V, IE = 1 mA, f = 10.7 MHz Min Typ - 0.7 Max - 0.1 -100 -10 Unit V A A A V MHz 50 0.50 0.99 - 0.1 150 2.8 22 1.2 220 Collector-emitter saturation voltage Transition frequency Noise figure Reverse transfer impedance Reverse transfer capacitance (Common emitter) VCE(sat) fT NF Zrb Cre dB pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SJJ00107BED 0.40.2 5 1 XN06435 PT Ta 500 IC VCE Ta = 25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 IC / IB = 10 -30 Total power dissipation PT (mW) 400 -25 Collector current IC (mA) -20 IB = -250 A -200 A -10 300 -15 -150 A -100 A -50 A -1 Ta = 75C 25C -25C 200 -10 100 - 0.1 -5 0 0 40 80 120 160 0 0 -2 -4 -6 -8 -10 - 0.01 - 0.1 -1 -10 -100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (mA) _ hFE IC VCE = -10 V Ta = 75C Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 Cre VCE Reverse transfer capacitance Cre (pF) (Common emitter) f = 1 MHz IE = 0 Ta = 25C 5 IC = -1 mA f = 10.7 MHz Ta = 25C 120 Forward current transfer ratio hFE 100 5 4 80 25C -25C 4 3 60 3 2 40 2 20 1 1 0 - 0.1 -1 -10 -100 0 - 0.1 -1 -10 -100 0 -1 -10 -100 Collector current IC (mA) Collector-base voltage VCB (V) Collector-emitter voltage VCE (V) fT I E 600 VCB = -10 V Ta = 25C GP IC 24 VCE = -10 V f = 100 MHz Ta = 25C 5 NF IE VCB = -10 V f = 100 MHz Ta = 25C Transition frequency fT (MHz) 500 20 4 400 16 Noise figure NF (dB) -1 -10 -100 Power gain GP (dB) 3 300 12 2 200 8 100 4 1 0 0.1 1 10 100 0 - 0.1 0 0.1 1 10 Emitter current IE (mA) Collector current IC (mA) Emitter current IE (mA) 2 SJJ00107BED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
Price & Availability of XN06435
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |